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January 29, 2007

Intel 45 nanometer Transistors Announced

Intel has announced the development of 45nm transistors, so tiny that 30,000 can fit on the head of a pin. The small wonders can switch on and off about 300 billion times a second,  and offer around 20 percent more performance than current 65 nanometer transistors. That means more performance and less cost for future 45 nanometer based processors inside the next generation Intel Core 2 family processors which are codenamed "Penryn." Mass production will begin in the second half of 2007.

By using a new material combination of high-k gate dielectrics and metal gates, Intel's 45nm transistors significantly improve performance to deliver faster multi-core processors that consume less power.

According to Intel co-founder Gordon Moore, "The implementation of high-k and metal materials marks the biggest change in transistor technology since the introduction of polysilicon gate MOS transistors in the late 1960s."

Compared to today's 65nm technology, Intel's 45nm technology will provide the following product benefits:    

* Approximately twice the transistor density (great for smaller chip sizes or increased transistor counts)    
* Approximately 30 percent reduction in transistor-switching power    

* Greater than 20 percent improvement in transistor-switching speed or a greater than 5 times reduction in source-drain leakage power    

* Greater than 10 times reduction in transistor gate oxide leakage for lower power requirements and increased battery life

Robert Scoble gives a behind the scenes video tour of Intel's newest 45 nanometer fab with Intel Senior Fellow, Mark Bohr on the latest ScobleShow.

read more | Intel

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